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preliminary datasheet boost type led driver with 12-channe l current source AP3612 aug. 2012 rev. 1. 1 bc d semiconductor manuf acturing limited 1 general description the AP3612 is a high effici ency boost controller with 12-string current sources for driving wled backlight. it operates over a wide input voltage range from 4.5v to 33v. the current of 12 strings are simply programmed from 20ma to 75ma with an external resistor. the current matching between each string is 1.5% (typ). its operating frequency can be adjusted from 0.1mhz to 1mhz. the AP3612 features cycle- by-cycle current limit, soft start, under voltage lock out (uvlo) protection, programmable ovp, over temperature protection (otp), open/short led protection, v out short protection and schottky diode short-circuit protection. the AP3612 is available in hsop-28 and soic-24 packages. features ? input voltage range: 4.5v to 33v ? drives up to 12 strings in parallel, 75ma per string ? programmable wled current from 20ma to 75ma ? adjustable operating frequency: 100khz to 1mhz ? string-to-string current matching accuracy: 1.5% ? built-in ocp, otp, uvlo ? external pwm dimming ? open/short led protection ? programmable soft start ? programmable ovp ? schottky diode/inductor short-circuit protection ? v out short/schottky diode open protection applications ? lcd monitor ? lcd display module ? lcd tv figure 1. package types of AP3612 hsop-28 soic-24
preliminary datasheet boost type led driver with 12-channe l current source AP3612 aug. 2012 rev. 1. 1 bc d semiconductor manuf acturing limited 2 pin configuration m28 package m package (hsop-28) (soic-24) 3 1 2 4 5 6 7 10 8 9 11 12 13 14 19 21 20 18 17 16 15 26 28 27 25 24 23 22 ch2 ch3 ch4 ch5 ch6 nc gnd iset ch12 ch7 ch8 ch9 ch10 ch11 ch1 dim comp nc status vin vcc rt ovp nc gnd out cs en figure 2. pin configurat ion of AP3612 (top view) 1 2 3 4 5 6 7 8 10 12 24 23 22 21 20 19 18 17 15 13 9 16 11 14 ch7 ch9 ch8 ch11 ch10 iset ovp ch12 en rt cs out ch5 ch6 ch3 ch4 ch2 dim ch1 vcc vin status comp gnd
preliminary datasheet boost type led driver with 12-channe l current source AP3612 aug. 2012 rev. 1. 1 bc d semiconductor manuf acturing limited 3 pin description pin number pin name function hsop-28 soic-24 28,1,2,3,4,5, 8,9,10,11,12 ,14 18,19,20,21, 22,23, 1, 2, 3, 4, 5, 7 ch1 to ch12 led current sink. leave the pin open directly if not used 6, 21,25 nc no connection 7, 20 24 gnd ground pin 13 6 iset led current setting pin. the corresponding maximum current of all strings is set through connecting a resistor from this pin to gnd 15 8 ovp over voltage protection pin. when the ovp pin voltage exceeds 2.0v, the ovp is triggered and the power switch is turned off. when the ovp pin voltage drops below hysteresis voltage, the ovp is released and the power switch will resume normal operation 16 9 rt frequency control pin 17 10 en on/off control pin. forcing this pin above 2.4v enables the ic while below 0.5v shuts down the ic. when the ic is in shutdown mode, all functions are disabled to decrease the supply current below 3 a 18 11 cs power switch current sense input 19 12 out boost converter power switch gate output. this pin output high voltage (5v/v in -0.5v) to drive the external n-mosfet 22 13 vcc 5v linear regulator output pin. this pin should be bypassed to gnd (recommend to connect with gnd pin) with a ceramic capacitor 23 14 vin supply input pin. a capacitor (typical 10
preliminary datasheet boost type led driver with 12-channe l current source AP3612 aug. 2012 rev. 1. 1 bc d semiconductor manuf acturing limited 4 functional block diagram figure 3. functional block diagram of AP3612
preliminary datasheet boost type led driver with 12-channe l current source AP3612 aug. 2012 rev. 1. 1 bc d semiconductor manuf acturing limited 5 ordering information AP3612 - circuit type package m28: hsop-28 m: soic-24 package temperature range part number marking id packing type hsop-28 -40 to 85c AP3612m28-g1 AP3612m28-g1 tube soic-24 AP3612m-g1 AP3612m-g1 tube bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. absolute maximum ratings (note 1) parameter symbol value unit input voltage v in -0.3 to 42 v ch1 to ch12 voltage v ch -0.3 to 65 v en pin voltage v en -0.3 to 7 v vcc pin voltage v cc -0.3 to 7 v cs pin voltage v cs -0.3 to 7 v comp pin voltage v comp -0.3 to 7 v iset pin voltage v iset -0.3 to 7 v out pin voltage v out -0.3 to 7 v ovp pin voltage v ovp -0.3 to 7 v rt pin voltage v rt -0.3 to 7 v status pin voltage v status -0.3 to 7 v dim pin voltage v dim -0.3 to 7 v gnd pin voltage v gnd -0.3 to 0.3 v thermal resistance (junction to ambient, free air, no heatsink) hsop-28 ja 59 oc/w soic-24 100 g1: green blank: tube
preliminary datasheet boost type led driver with 12-channe l current source AP3612 aug. 2012 rev. 1. 1 bc d semiconductor manuf acturing limited 6 absolute maximum ratings (note 1) (continued) parameter symbol value unit operating junction temperature t j 150 oc storage temperature t stg -65 to 150 oc lead temperature (soldering, 10sec) t lead 260 oc esd (machine model) 200 v esd (human body model) 2000 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. note 2: negative cs 100ns transient maximum rating voltage reach to -0.4v. recommended operating conditions parameter symbol min max unit input voltage v in 4.5 33 v operating frequency f o 0.1 1 mhz led channel voltage v chx 60 v led channel current i chx 20 75 ma pwm dimming frequency f pwm 0.1 20 khz operating ambient temperature range t a -40 85 oc
preliminary datasheet boost type led driver with 12-channe l current source AP3612 aug. 2012 rev. 1. 1 bc d semiconductor manuf acturing limited 7 electrical characteristics v in =24v, v en =5v, typical t a =25c, unless otherwise specified. parameter symbol conditi ons min typ max unit input supply input voltage v in 4.5 33 v quiescent current i q no switching 3 5 ma shutdown supply current i shtd v en =v dd =0v 0.1 3 a uvlo v uvlo v in rising 3.6 3.8 4.0 v uvlo hysteresis v hys 200 mv vcc section vcc voltage v cc v in 5.5v 5 v v in 5.5v, load=10ma v in -0.1 v out pin rising time (note 3) t rising 1nf load 30 50 ns out pin falling time (note 3) t falling 1nf load 30 50 ns load regulation (note 3) load=0 to 30ma 5 mv/ma line regulation (note 3) v in =5.5 to 24v 0.3 mv/v high frequency oscillator switch frequency (target: 10% variation) f osc r t =100k ? 440 520 600 khz switch frequency range 0.1 1 mhz maximum duty cycle d max f=500khz 88 90 % minimum on-time (note 3) t on-time f=500khz 200 ns enable logic and dimming logic en high voltage v en_h 2.4 v en low voltage v en_l 0.5 v pwm logic for external dimming v dim_h 2.5 v v dim_l 0.3 v pwm dimming minimum pulse width (note 3) t pwm_min 3/f osc s
preliminary datasheet boost type led driver with 12-channe l current source AP3612 aug. 2012 rev. 1. 1 bc d semiconductor manuf acturing limited 8 electrical characteristics (continued) v in =24v, v en =5v, typical t a =25c, unless otherwise specified. parameter symbol condi tions min typ max unit power switch drive current limit threshold voltage v limit 480 540 600 mv d/l short threshold voltage (note 3) v limit2 720 800 880 mv current sense leb time (note 3) t leb 80 100 150 ns compensation and soft start (comp pin) error amplifier trans-conductance g ea 2300 a/v sourcing current i o_h v comp =0.5v 80 120 160 a sinking current i o_l v comp =2v 80 120 160 a over voltage protection ovp threshold voltage v ovp v out rising 1.9 2.0 2.1 v ovp hysteresis v ovp_hys 250 mv shutdown under abnormal condition v ovp-sh 3.0 3.2 3.4 v current source led current matching between each string (note 4) i ch_match i ch =60ma 1.5 4 % regulation current per channel i ch r iset =6.667k ? 55 60 65 ma minimum led regulation voltage v led_reg i chx =60ma 400 mv ch1 to ch12 leakage current i led_leak v en =0v, v led =37v 0.1 1 a led short protection threshold v led-s 6.6 7.3 8.0 v over temperature protection thermal shutdown temperature (note 3) t otsd 160 oc thermal shutdown recovery (note 3) t hys 140 oc note 3: guaranteed by design. note 4: % 100 2 _ ? = avg min max match st i i i i
preliminary datasheet boost type led driver with 12-channe l current source AP3612 aug. 2012 rev. 1. 1 bc d semiconductor manuf acturing limited 9 typical performance characteristics v in =24v, v en =v dd =5v, 13 leds in series, 12 strings in parallel, 60ma/string, t a =25c, unless otherwise specified. figure 4. frequency vs. r t figure 5. vcc voltage vs. input voltage figure 6. v ch regulation voltage vs. output current figure 7. v led regulation voltage vs. temperature 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 frequency (khz) r t (k ? ) 4 6 8 10121416182022242628303234 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 vcc voltage(v) input voltage(v) c vcc =2.2 f 20 25 30 35 40 45 50 55 60 65 70 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 v ch regulation voltage (v) output current /ch (ma) r t =100k -50 -25 0 25 50 75 100 125 150 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 v ch regulation voltage (v) temperature ( o c) v in =24v, r iset =10k
preliminary datasheet boost type led driver with 12-channe l current source AP3612 aug. 2012 rev. 1. 1 bc d semiconductor manuf acturing limited 10 typical performance characteristics (continued) v in =24v, v en =v dd =5v, 13 leds in series, 12 strings in parallel, 60ma/string, t a =25c, unless otherwise specified. figure 8. channel current vs. channel figure 9. efficiency vs. output current figure 10. steady state figure 11. system startup 012345 0 10 20 30 40 50 60 70 80 channel current (ma) channel i set =20ma i set =73ma i set =40ma i set =60ma 0 100 200 300 400 500 600 700 800 80 82 84 86 88 90 92 94 96 98 efficiency (%) output current (ma) v in =24v led: 12p13s i ch 10ma/div v sw 50v/div v out_ac 500 m v/div v ch 200 m v/div time 1 s/div v sw 20v/div v in 20v/div v out 20v/div i ch 100ma/div time 20ms/div
preliminary datasheet boost type led driver with 12-channe l current source AP3612 aug. 2012 rev. 1. 1 bc d semiconductor manuf acturing limited 11 typical performance characteristics (continued) v in =24v, v en =v dd =5v, 13 leds in series, 12 strings in parallel, 60ma/string, t a =25c, unless otherwise specified. figure 12. pwm dimming figure 13. led short protection figure 14. led open protection figure 15. schottky/inductor short protection v sw 20v/div v pwm 5v/div i ch 50ma/div time 2ms/div time 10 s/div v sw 50v/div v status 5v/div i ch 100ma/div v ch 5v/div time 50ms/div time 50 s/div v sw 50v/div v status 5v/div i ch 50ma/div v ovp 1v/div v status 5v/div v sw 50v/div v cs 1v/div i ch 50ma/div
preliminary datasheet boost type led driver with 12-channe l current source AP3612 aug. 2012 rev. 1. 1 bc d semiconductor manuf acturing limited 12 typical performance characteristics (continued) v in =24v, v en =v dd =5v, 13 leds in series, 12 strings in parallel, 60ma/string, t a =25c, unless otherwise specified. figure 16. v out short/diode open protection figure 17. over temperature protection v ovp 5v/div v in 10v/div v gate 5v/div i ch 50ma/div time 5ms/div v status 5v/div v sw 50v/div v out 50v/div i ch 50ma / div time 1s/div
preliminary datasheet boost type led driver with 12-channe l current source AP3612 aug. 2012 rev. 1. 1 bc d semiconductor manuf acturing limited 13 application information 1. enable the AP3612 is enabled when the voltage to en is greater than approximately 2.4v, disabled when lower than 0.5v. 2. frequency selection an external resistor r t , placed between rt pin and gnd, can be used to set the operating frequency. the operating frequency ranges from 100khz to 1mhz. the high frequency operation optimizes the regulator for the smallest-sized component application, while low frequency operation can help to reduce switch loss. the approximate operating frequency can be expressed as below: ] [ 52 ] [ ? = k r mhz f rt osc 3. led current setting the maximum led current per channel can be adjusted up to 75ma via iset pin. when 75ma current is needed in application, two or more channels can be paralleled to provide larger drive current. connect a resistor r iset between iset pin and gnd to set the reference current i set . the led current can be expressed as below: ] [ 400 ] [ ? = k r ma i iset led 4. dimming control applying a pwm signal to dim pin to adjust the led current, that means, the led current of all enabled channels can be ad justed at the same time and the led brightness can be adjusted from 1% i chx _ max to 100% i chx _ max . during the ?high level? period of pwm signal, the led is turned on and 100% of the current flows through led, while during the ?low level? period of the pwm signal, the led is turned off and almost no current flows through the led, thus changing the average current through led and finally adjusting led brightness. the external pwm signal frequency applied to pwm pin is allowed to be 100hz or higher. 5. status output after ic is enabled, status will output logic low if any of the following conditions exists: 1) any string is open 2) led short circuit protection 3) shut down under abnormal condition 4) over temperature protection 5) schottky diode short protection 6) over voltage protection 7) v out short/open schottky diode protection 6. over voltage protection the AP3612 integrates an ovp circuit. the ovp pin is connected to the center tap of voltage-divider (r ov1 and r ov2 ) that placed between high voltage output and gnd. if the voltage on ovp pin exceeds 2.0v, which may results from open loop or excessive output voltage, all the functions of AP3612 will be disabled with output voltage falling. the ovp hysteresis is 250mv. the formula of ovp can be expressed as below: ov2 ov2 ov1 ovp r 2.0v ) r (r v + = 7. over current protection the AP3612 integrates an ocp circuit. the cs pin is connected to the voltage-sensor (r cs ) that placed between the drain of mos and gnd. if the voltage on cs pin exceeds 0.54v, it is turned off immediately and will not turn on until the next cycle begins. 8. led short-circuit protection the AP3612 integrates an led short-circuit protection circuit. if the voltage at any of the ch1-ch12 pins exceeds a threshold of approximately 7.3v during normal operation, the corresponding string is turned off and is latched off. toggle v in and/or en to reset the latch. led short detecting logic priority is lower than open led and ovp logic. the led short detecting is triggered when 0.1v preliminary datasheet boost type led driver with 12-channe l current source AP3612 aug. 2012 rev. 1. 1 bc d semiconductor manuf acturing limited 14 application information (continued) 9. led open-circuit protection the AP3612 integrates an led open-circuit protection circuit. when any led string is open, v out will boost up until the voltage at ovp pin reaches an approximate 2.0v threshold. the ic will automatically ignore the open string whose corresponding pin voltage is less than 100mv and the remaining string will continue operation. if all the strings are open and the voltage at ovp reaches a threshold of 2.0v, the mosfet drive gate will turn off and ic will shut down and latch. 10. v out short/open schottky diode protection the AP3612 monitors the ovp pin, if the ovp pin voltage is less than 0.1v, mosfet drive output will turn off. this protects the converter if the output schottky diode is open or v out is shorted to ground. 11. under voltage lockout the AP3612 provides an under voltage lockout circuit to prevent it from undefined status when startup. the uvlo circuit shuts down the device when v cc drops below 3.6v. the uvlo circuit has 200mv hysteresis, which means the device starts up again when v cc rise to 3.8v. 12. over temperature protection the AP3612 features over temperature protection, if the junction temperature exceeds approximately 160oc, the ic will shut down until the junction temperature is less than approximately 140oc. when the ic is released from over temperature shutdown, it will start a soft-start process. 13. schottky diode/inductor short cir- cuit protection the AP3612 features schottky diode/inductor short-circuit protection circuit. when cs pin voltage exceeds 0.8v for greater th an 16 switching clocks, the ic will be latched. the voltage of cs is monitored after a short delay of leb. 14. shut down under abnormal cond- ition the AP3612 features shutdown under abnormal condition protection circuit. when ovp pin voltage exceeds 3.2v, the ic will latc h. toggle en to restart the ic. this feature can be used for any other protection to shut down the ic.
preliminary datasheet boost type led driver with 12-channe l current source AP3612 aug. 2012 rev. 1. 1 bc d semiconductor manuf acturing limited 15 typical application --- figure 18. typical application circuit of AP3612
preliminary datasheet boost type led driver with 12-channe l current source AP3612 aug. 2012 rev. 1. 1 bc d semiconductor manuf acturing limited 16 mechanical dimensions hsop-28 unit: mm(inch) 17.890(0.704) 0.204(0.008) 0 o 8 o 18.190(0.716) 0.360(0.014) 0.400(0.016) 1.270(0.050) 10.000(0.394) 10.650(0.419) 7.400(0.291) 7.600(0.300) 0.230(0.009) 0.470(0.019) 0.100(0.004) 0.300(0.012) 2.280(0.090) 2.630(0.104) 2.180(0.086) 2.330(0.092) 0.800(0.031) typ 5.050(0.199) 5.250(0.207) note: eject hole, oriented hol e and mold mark is optional.
preliminary datasheet boost type led driver with 12-channe l current source AP3612 aug. 2012 rev. 1. 1 bc d semiconductor manuf acturing limited 17 mechanical dimensions (continued) soic-24 unit: mm(inch) 0.204(0.008) 0.330(0.013) 0 8 7.400(0.291) 7.600(0.299) 15.200(0.598) 15.600(0.614) 1.270(0.050) bsc 0.330(0.013) 0.510(0.020) 0.400(0.016) 1.270(0.050) 0.050(0.002) 0.300(0.012) 2.350(0.093) 2.800(0.110) 2.100(0.083) 2.650(0.104) 9.800(0.386) 10.610(0.418) note: eject hole, oriented hole and mold mark is optional.
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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